STGFW30V60DF
IGBT 600V 60A 58W TO-3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGFW30V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a 600 V collector-emitter breakdown voltage. This device offers a continuous collector current of 60 A and a pulsed collector current of 120 A. The maximum power dissipation is 58 W. Key electrical parameters include a Vce(on) of 2.3 V at 15 V gate-emitter voltage and 30 A collector current. The gate charge is 163 nC. Reverse recovery time is specified at 53 ns, with typical turn-on and turn-off delays of 45 ns and 189 ns respectively at 25°C. Switching energy is 383 µJ (on) and 233 µJ (off) under test conditions of 400 V, 30 A, 10 Ohm, 15 V. The STGFW30V60DF is packaged in a TO-3PF (TO-3P-3 Full Pack) for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component finds application in power factor correction, inverters, and motor drives within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 58 W |
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