STGFW30H65FB
IGBT 650V 60A 58W TO3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGFW30H65FB Trench Field Stop IGBT. This device offers a 650V collector-emitter breakdown voltage and a continuous collector current of 60A, with a pulsed capability of 120A. The STGFW30H65FB features a maximum power dissipation of 58W and a low on-state voltage of 2V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include 149 nC gate charge and switching energies of 151µJ (on) and 293µJ (off) under specified test conditions. Designed for high-temperature operation from -55°C to 175°C (TJ), this IGBT is housed in a TO-3PF-3 package for through-hole mounting. It is commonly utilized in power factor correction, induction heating, and uninterruptible power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-3PF-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/146ns |
| Switching Energy | 151µJ (on), 293µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 149 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 58 W |
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