STGFW20V60DF
IGBT 600V 40A 52W TO-3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGFW20V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capacity of 40A, with a pulsed capability of 80A. Key performance parameters include a maximum power dissipation of 52W and a low collector-emitter saturation voltage (Vce(on)) of 2.2V at 20A and 15V gate-emitter voltage. The device exhibits switching times of 38ns turn-on and 149ns turn-off at 25°C, with associated switching energies of 200µJ (on) and 130µJ (off) under test conditions of 400V and 20A. The TO-3PF package facilitates through-hole mounting and operates across a temperature range of -55°C to 175°C. This IGBT is suitable for power factor correction (PFC) and general-purpose inverter applications within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 38ns/149ns |
| Switching Energy | 200µJ (on), 130µJ (off) |
| Test Condition | 400V, 20A, 15V |
| Gate Charge | 116 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 52 W |
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