STGFW20H65FB
IGBT 650V 40A 52W TO3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGFW20H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability up to 80 A. The STGFW20H65FB exhibits a low on-state voltage of 2 V at 15 V gate-emitter voltage and 20 A collector current, contributing to reduced conduction losses. Its switching characteristics include typical turn-on delay of 30 ns and turn-off delay of 139 ns at 25°C, with switching energies of 77 µJ (on) and 170 µJ (off) under specified test conditions. The device is housed in a TO-3PFM (SC-93-3) through-hole package, suitable for demanding thermal management. This IGBT is commonly utilized in power factor correction, motor drives, and uninterruptible power supplies across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 30ns/139ns |
| Switching Energy | 77µJ (on), 170µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 52 W |
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