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STGF30H60DF

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STGF30H60DF

IGBT 600V 60A 37W TO220FP

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

The STMicroelectronics STGF30H60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 60A, with a pulsed current capability of 120A. Its low on-state voltage of 2.4V at 15V gate-emitter voltage and 30A collector current, coupled with a switching energy of 350µJ (on) and 400µJ (off), contributes to reduced power dissipation. The device features a maximum power dissipation of 37W and an operating temperature range of -40°C to 175°C (TJ). Packaged in a TO-220FP (TO-220-3 Full Pack) through-hole configuration, this IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems. The STGF30H60DF provides typical turn-on delay (td(on)) of 50ns and turn-off delay (td(off)) of 160ns at 25°C, tested under 400V, 30A, 10 Ohm, 15V conditions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)110 ns
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Supplier Device PackageTO-220FP
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C50ns/160ns
Switching Energy350µJ (on), 400µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge105 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max37 W

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