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STGF19NC60HD

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STGF19NC60HD

IGBT 600V 16A 32W TO220FP

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGF19NC60HD is a 600V, 16A insulated gate bipolar transistor (IGBT) from the PowerMESH™ series, housed in a TO-220FP package. This through-hole component features a maximum collector current of 16A and a pulsed collector current of 60A. The device exhibits a typical on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include a gate charge of 53 nC, turn-on delay (Td(on)) of 25ns, and turn-off delay (Td(off)) of 97ns at 25°C. Reverse recovery time (trr) is specified at 31ns. With a maximum power dissipation of 32W, it is suitable for applications operating within a temperature range of -55°C to 150°C. This IGBT is commonly utilized in power factor correction, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)31 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
Supplier Device PackageTO-220FP
IGBT Type-
Td (on/off) @ 25°C25ns/97ns
Switching Energy85µJ (on), 189µJ (off)
Test Condition390V, 12A, 10Ohm, 15V
Gate Charge53 nC
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max32 W

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