STGF17NC60SD
IGBT 600V 17A 32W TO220FPManufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics STGF17NC60SD is a high-performance PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 600V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) of 17A, with a pulsed capability of 80A. The STGF17NC60SD exhibits a low on-state voltage (Vce(on)) of 1.9V at 15V gate-source voltage (Vge) and 12A collector current. Switching characteristics include a turn-on delay (Td(on)) of 17.5ns and a turn-off delay (Td(off)) of 175ns at 25°C, along with a reverse recovery time (trr) of 31ns. With a maximum power dissipation of 32W, this IGBT is suitable for power factor correction, motor drives, and industrial power supplies. The device is packaged in a TO-220FP format for through-hole mounting and is supplied in tubes.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 31 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 12A |
| Supplier Device Package | TO-220FP |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17.5ns/175ns |
| Switching Energy | 135µJ (on), 815µJ (off) |
| Test Condition | 480V, 12A, 10Ohm, 15V |
| Gate Charge | 54.5 nC |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 32 W |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
