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STGF17NC60SD

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STGF17NC60SD

IGBT 600V 17A 32W TO220FP

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGF17NC60SD is a high-performance PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 600V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) of 17A, with a pulsed capability of 80A. The STGF17NC60SD exhibits a low on-state voltage (Vce(on)) of 1.9V at 15V gate-source voltage (Vge) and 12A collector current. Switching characteristics include a turn-on delay (Td(on)) of 17.5ns and a turn-off delay (Td(off)) of 175ns at 25°C, along with a reverse recovery time (trr) of 31ns. With a maximum power dissipation of 32W, this IGBT is suitable for power factor correction, motor drives, and industrial power supplies. The device is packaged in a TO-220FP format for through-hole mounting and is supplied in tubes.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)31 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 12A
Supplier Device PackageTO-220FP
IGBT Type-
Td (on/off) @ 25°C17.5ns/175ns
Switching Energy135µJ (on), 815µJ (off)
Test Condition480V, 12A, 10Ohm, 15V
Gate Charge54.5 nC
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max32 W

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