STGD5NB120SZT4
IGBT 1200V 10A DPAKManufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics STGD5NB120SZT4 is a 1200 V, 10 A PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT). This surface mount device, packaged in a TO-252-3 (DPAK) configuration, offers a maximum power dissipation of 75 W. Key electrical characteristics include a collector-emitter on-voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 5A collector current, with a pulsed collector current (Icm) of 10A. Switching performance is specified with a turn-on delay (Td(on)) of 690ns and turn-off delay (Td(off)) of 12.1µs at 25°C, tested under 960V and 5A conditions. The operating temperature range is from -55°C to 150°C. This component is suitable for applications in power switching and high-voltage conversion across various industrial sectors.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Supplier Device Package | DPAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 690ns/12.1µs |
| Switching Energy | 2.59mJ (on), 9mJ (off) |
| Test Condition | 960V, 5A, 1kOhm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 10 A |
| Power - Max | 75 W |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
