STGD5NB120SZ-1
IGBT 1200V 10A TO251Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGD5NB120SZ-1 is a 1200V, 10A PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This through-hole component, housed in a TO-251 (IPAK) package, offers a maximum continuous collector current of 10A and a pulsed collector current of 10A, with a power dissipation of 75W. Key performance characteristics include a Vce(on) of 2V at 15V gate-emitter voltage and 5A collector current, and switching energies of 2.59mJ (on) and 9mJ (off) under specified test conditions (960V, 5A, 1kOhm, 15V). The operating temperature range is -55°C to 150°C (TJ). This device is suitable for demanding power conversion and control systems across various industrial sectors.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Supplier Device Package | TO-251 (IPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 690ns/12.1µs |
| Switching Energy | 2.59mJ (on), 9mJ (off) |
| Test Condition | 960V, 5A, 1kOhm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 10 A |
| Power - Max | 75 W |
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