STGD3NC120H-1
IGBT 1200V 16A IPAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGD3NC120H-1 is a 1200V, 16A insulated gate bipolar transistor (IGBT) designed for power switching applications. This device features a maximum collector current of 16A and a pulsed collector current of 20A. With a power dissipation capability of 105W and a low on-state voltage of 2.8V at 3A and 15V gate-emitter voltage, the STGD3NC120H-1 offers efficient power handling. The IGBT exhibits typical turn-on and turn-off delays of 15ns and 118ns respectively at 25°C, with switching energies of 236µJ (on) and 290µJ (off) under test conditions of 800V, 3A, 10 Ohm, and 15V. The component is housed in an IPAK (TO-251) package with through-hole mounting, suitable for operation across a wide temperature range from -55°C to 150°C (TJ). This STMicroelectronics IGBT is frequently utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Supplier Device Package | IPAK (TO-251) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/118ns |
| Switching Energy | 236µJ (on), 290µJ (off) |
| Test Condition | 800V, 3A, 10Ohm, 15V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 105 W |
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