Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

STGD18N40LZ-1

Banner
productimage

STGD18N40LZ-1

IGBT 420V 25A IPAK

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

The STMicroelectronics STGD18N40LZ-1 is a high-performance N-channel IGBT from the PowerMESH™ series. This device features a 420V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current capability of 25A (40A pulsed). With a maximum power dissipation of 125W, it is suitable for demanding applications. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.7V at 4.5V Vge and 10A Ic, and a gate charge of 29 nC. Designed for through-hole mounting in an IPAK (TO-251AA) package, it operates reliably across a wide temperature range of -55°C to 175°C. This component is commonly utilized in power switching and motor control applications across various industrial sectors.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeLogic
Vce(on) (Max) @ Vge, Ic1.7V @ 4.5V, 10A
Supplier Device PackageIPAK
IGBT Type-
Td (on/off) @ 25°C650ns/13.5µs
Switching Energy-
Test Condition300V, 10A, 5V
Gate Charge29 nC
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)420 V
Current - Collector Pulsed (Icm)40 A
Power - Max125 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STGD3NB60SDT4

IGBT 600V 6A DPAK

product image
STH3N150-2

MOSFET N-CH 1500V 2.5A H2PAK

product image
STGP7NC60HD

IGBT 600V 25A 80W TO220