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STGB7NC60HT4

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STGB7NC60HT4

IGBT 600V 25A 80W D2PAK

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGB7NC60HT4 is a PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) offering a 600V collector-emitter breakdown voltage. This device features a 25A continuous collector current (Ic) and 50A pulsed collector current (Icm). The IGBT type is standard input with a maximum power dissipation of 80W. It exhibits a Vce(on) of 2.5V at 15V Vge and 7A Ic, with a gate charge of 35 nC. Switching characteristics include a turn-on delay (td(on)) of 18.5ns and turn-off delay (td(off)) of 72ns at 25°C, tested under 390V, 7A, 10 Ohm, 15V conditions. The reverse recovery time (trr) is 37ns. The STGB7NC60HT4 is supplied in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package, delivered on tape and reel. This component is utilized in industrial power supplies, motor control, and lighting applications.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)37 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C18.5ns/72ns
Switching Energy-
Test Condition390V, 7A, 10Ohm, 15V
Gate Charge35 nC
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)50 A
Power - Max80 W

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