STGB6NC60HD-1
IGBT 600V 15A 56W I2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGB6NC60HD-1 is a 600V, 15A PowerMESH™ series insulated gate bipolar transistor (IGBT) in an I2PAK package. This device features a maximum collector power dissipation of 56W and a pulsed collector current of 21A. Key electrical characteristics include a Vce(on) of 2.5V at 15V/3A, with turn-on and turn-off delays of 12ns and 76ns respectively at 25°C. Switching energy is specified at 20µJ (on) and 68µJ (off) under test conditions of 390V, 3A, 10 Ohm, and 15V. The gate charge is 13.6 nC. This through-hole component operates within a temperature range of -55°C to 150°C. The STGB6NC60HD-1 is suitable for applications in industrial and automotive power systems.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 21 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 3A |
| Supplier Device Package | I2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/76ns |
| Switching Energy | 20µJ (on), 68µJ (off) |
| Test Condition | 390V, 3A, 10Ohm, 15V |
| Gate Charge | 13.6 nC |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 21 A |
| Power - Max | 56 W |
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