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STGB3HF60HD

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STGB3HF60HD

IGBT 600V 7.5A D2PAK

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGB3HF60HD is a 600V, 7.5A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a maximum continuous collector current (Ic) of 7.5A and a pulsed collector current (Icm) of 18A. The IGBT Type is Standard with a 12 nC gate charge, contributing to efficient switching with typical on-time delay (Td(on)) of 11ns at 400V and 1.5A. The device offers a maximum collector-emitter voltage (Vce(on)) of 2.95V at 15V gate-emitter voltage and 1.5A collector current. With a maximum power dissipation of 38W and operating temperature range of -55°C to 150°C (TJ), the STGB3HF60HD is suitable for demanding environments. The D2PAK (TO-263-3) surface mount package facilitates compact board designs. It is supplied in Tape & Reel (TR) packaging and is commonly found in industrial motor control, power factor correction, and uninterruptible power supply (UPS) systems. Switching energy is rated at 19µJ (on) and 12µJ (off) under test conditions of 400V, 1.5A, 100O, and 15V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)85 ns
Vce(on) (Max) @ Vge, Ic2.95V @ 15V, 1.5A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C11ns/60ns
Switching Energy19µJ (on), 12µJ (off)
Test Condition400V, 1.5A, 100Ohm, 15V
Gate Charge12 nC
Current - Collector (Ic) (Max)7.5 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)18 A
Power - Max38 W

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