STGB30V60F
TRENCH GATE FIELD-STOP IGBT, V SManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGB30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A at 25°C, with a pulsed current capability of 120A. The STGB30V60F offers a maximum power dissipation of 260W and a low on-state voltage of 2.3V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include a turn-on delay of 45ns and a turn-off delay of 189ns, with switching energies of 383µJ (on) and 233µJ (off) under specific test conditions. This device is housed in a TO-263 (D2PAK) surface-mount package, suitable for demanding thermal management. The STGB30V60F is utilized in industrial power supplies, motor control, and renewable energy systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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