STGB30H60DF
IGBT 600V 60A 260W D2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGB30H60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A, with a pulsed capability of 120 A. Its low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 30 A collector current, coupled with switching energy figures of 350 µJ (on) and 400 µJ (off) at the specified test conditions, ensures robust performance. The IGBT offers a maximum power dissipation of 260 W and operates across a wide temperature range of -40°C to 175°C. Supplied in a D2PAK surface mount package (TO-263-3, D2PAK), this component is suitable for industrial and automotive power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | D2PAK |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/160ns |
| Switching Energy | 350µJ (on), 400µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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