STGB20V60F
IGBT 600V 40A 167W D2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGB20V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and supports a continuous collector current of 40 A, with a pulsed current capability of 80 A. The STGB20V60F offers a maximum power dissipation of 167 W and a low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 20 A collector current. Key switching parameters include a gate charge of 116 nC and switching energy of 200 µJ (on) and 130 µJ (off) under test conditions of 400 V, 20 A, 15 V. The TO-263-3 (D2PAK) surface mount package with Tape & Reel (TR) packaging is suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 38ns/149ns |
| Switching Energy | 200µJ (on), 130µJ (off) |
| Test Condition | 400V, 20A, 15V |
| Gate Charge | 116 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 167 W |
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