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STGB20V60DF

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STGB20V60DF

IGBT 600V 40A 167W D2PAK

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGB20V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 80 A. The device offers a low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 20 A collector current, contributing to reduced conduction losses. Switching characteristics include a typical turn-on delay (Td(on)) of 38 ns and turn-off delay (Td(off)) of 149 ns at 25°C, with a reverse recovery time (trr) of 40 ns, both measured under test conditions of 400 V and 20 A. The maximum power dissipation is 167 W, and it operates across a temperature range of -55°C to 175°C (TJ). The STGB20V60DF is supplied in a D2PAK surface mount package for streamlined PCB integration. This IGBT is commonly utilized in industrial power supplies, motor drives, and solar inverters.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)40 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Supplier Device PackageD2PAK
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C38ns/149ns
Switching Energy200µJ (on), 130µJ (off)
Test Condition400V, 20A, 15V
Gate Charge116 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max167 W

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