STGB20NC60VT4
IGBT 600V 60A 200W D2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGB20NC60VT4 is a PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 60A, with a pulsed capability of 100A. The maximum power dissipation is 200W. The IGBT exhibits a typical on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current, with switching times of 31ns turn-on and 100ns turn-off under specified test conditions. It is housed in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 31ns/100ns |
| Switching Energy | 220µJ (on), 330µJ (off) |
| Test Condition | 390V, 20A, 3.3Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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