STGB20NB37LZT4
IGBT 425V 40A 200W D2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics PowerMESH™ Series IGBT STGB20NB37LZT4 is a high-performance discrete IGBT designed for demanding power applications. This component boasts a 425V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. The device offers a maximum power dissipation of 200W and features a low on-state voltage (Vce(on)) of 2V at 4.5V gate-source voltage and 20A collector current. Switching characteristics include a typical turn-off switching energy of 11.8mJ at 250V, 20A, 1kOhm, and 4.5V, with turn-on and turn-off delays of 2.3µs and 2µs respectively. The STGB20NB37LZT4 is housed in a surface-mount D2PAK (TO-263-3) package, supplied on tape and reel. It is suitable for applications in industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 2.3µs/2µs |
| Switching Energy | 11.8mJ (off) |
| Test Condition | 250V, 20A, 1kOhm, 4.5V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 425 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
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