STGB20NB37LZ
IGBT 425V 40A 200W D2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics STGB20NB37LZ is a N-channel Trench IGBT from the PowerMESH™ series. This device features a 425V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. The IGBT offers a maximum power dissipation of 200W and a low on-state voltage (Vce(on)) of 2V at 4.5V gate-emitter voltage and 20A collector current. Switching performance is characterized by a typical turn-off switching energy of 11.8mJ at 250V, 20A, and 1kOhm, with turn-on and turn-off delays of 2.3µs and 2µs respectively at 25°C. With a gate charge of 51nC, this IGBT is designed for surface mounting in a TO-263-3, D2PAK package. It is suitable for applications in industrial power supplies, motor control, and soft-switching converters. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 2.3µs/2µs |
| Switching Energy | 11.8mJ (off) |
| Test Condition | 250V, 20A, 1kOhm, 4.5V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 425 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
