STGB20NB32LZ
IGBT 375V 40A 150W I2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGB20NB32LZ is a high-performance IGBT from the PowerMESH™ series, designed for demanding power switching applications. This component features a 375V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. Its low on-state voltage of 2V at 4.5V gate-emitter voltage and 20A collector current, coupled with a switching energy of 11.8mJ (off) under specified test conditions, ensures efficient operation. The device boasts a maximum power dissipation of 150W and operates reliably up to a junction temperature of 175°C. The gate charge is rated at 51 nC, contributing to its fast switching characteristics, with typical turn-on and turn-off times of 2.3µs and 11.5µs respectively. Packaged in a TO-263-3, D2PAK surface mount configuration, this IGBT is suitable for use in industrial automation, power supplies, and automotive systems.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 2.3µs/11.5µs |
| Switching Energy | 11.8mJ (off) |
| Test Condition | 250V, 20A, 1kOhm, 4.5V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 375 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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