STGB18N40LZ-1
IGBT 420V 30A 150W I2PAKManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGB18N40LZ-1 is a PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 420V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a pulsed current rating of 40A. The low on-state voltage, Vce(on) of 1.7V at 4.5V gate-emitter voltage and 10A collector current, contributes to efficient power dissipation, with a maximum power rating of 150W. Its logic input type ensures compatibility with various control signals, and the 29nC gate charge facilitates fast switching characteristics. The STGB18N40LZ-1 is housed in a TO-262-3 Long Leads, I2PAK package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. This component is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
| Supplier Device Package | TO-262 (I2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 650ns/13.5µs |
| Switching Energy | - |
| Test Condition | 300V, 10A, 5V |
| Gate Charge | 29 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 420 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 150 W |
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