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STGB10NB60ST4

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STGB10NB60ST4

IGBT 600V 29A 80W D2PAK

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGB10NB60ST4 is a 600V N-channel IGBT from the PowerMESH™ series. This device features a 29A continuous collector current (Ic) and an 80A pulsed collector current (Icm). With a maximum power dissipation of 80W and a low on-state voltage (Vce(on)) of 1.75V at 15V gate-emitter voltage and 10A collector current, it is engineered for efficient power switching. The STGB10NB60ST4 has a gate charge of 33 nC and a typical switching energy of 600µJ (on) and 5mJ (off) under test conditions of 480V, 10A, 1kOhm, and 15V. This IGBT is housed in a TO-263-3, D2PAK surface-mount package and is supplied on tape and reel (TR). It is suitable for applications in industrial power supplies and motor control. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 9 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 10A
Supplier Device PackageTO-263 (D2PAK)
IGBT Type-
Td (on/off) @ 25°C700ns/1.2µs
Switching Energy600µJ (on), 5mJ (off)
Test Condition480V, 10A, 1kOhm, 15V
Gate Charge33 nC
Current - Collector (Ic) (Max)29 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max80 W

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