STY80NM60N
MOSFET N-CH 600V 74A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STY80NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 74A at 25°C, with a maximum power dissipation of 447W at 25°C. The Rds On is specified at a maximum of 35mOhm at 37A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 360 nC at 10V and Input Capacitance (Ciss) of 10100 pF at 50V. The device operates at a junction temperature up to 150°C and is housed in a through-hole TO-247-3 package, identified by the MAX247™ supplier device package. This MOSFET is suitable for applications in power switching and industrial power supplies.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 447W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10100 pF @ 50 V |
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