STY34NB50
MOSFET N-CH 500V 34A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics PowerMESH™ N-Channel MOSFET, part number STY34NB50. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 34A at 25°C (Tc). With a maximum power dissipation of 450W (Tc), it utilizes MOSFET technology and offers a low on-resistance of 130mOhm at 17A and 10V (Vgs). The device has a gate charge (Qg) of 223 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. The STY34NB50 is housed in a TO-247-3 package, also known as MAX247™, and is supplied in tubes. This through-hole mounted device operates at temperatures up to 150°C (TJ) and is suitable for applications in power supplies, industrial automation, and electric vehicle powertrains.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 223 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
