STY30NK90Z
MOSFET N-CH 900V 26A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STY30NK90Z is a SuperMESH™ series N-Channel Power MOSFET designed for high-voltage applications. This component features a Vds of 900V and a continuous drain current (Id) of 26A (Tc) at 25°C. With a maximum power dissipation of 450W (Tc), it is suitable for demanding power conversion tasks. The STY30NK90Z offers a low Rds On of 260mOhm at 14A, 10V, and a gate charge (Qg) of 490 nC at 10V. It utilizes a through-hole mounting type within a TO-247-3 package. This device is commonly employed in industrial, consumer electronics, and renewable energy sectors requiring robust high-voltage switching.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 150µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 490 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
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