STY140NS10
MOSFET N-CH 100V 140A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STY140NS10 is a N-Channel Power MOSFET from the MESH OVERLAY™ series, offered in a TO-247-3 package. This through-hole component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 140A at 25°C (Tc), with a maximum power dissipation of 450W (Tc). The STY140NS10 exhibits a low on-resistance of 11mOhm (max) at 70A and 10V gate drive. Key parameters include a gate charge (Qg) of 600 nC (max) at 10V and input capacitance (Ciss) of 12600 pF (max) at 25V. This device is suitable for applications in power supplies, battery management, and motor control systems. It operates within a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 600 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V |
Request a Quote
Clients Also Buy
STB19NF20
MOSFET N-CH 200V 15A D2PAK
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
STD5N20T4
MOSFET N-CH 200V 5A DPAK
