STY130NF20D
MOSFET N-CH 200V 130A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ II N-Channel Power MOSFET, part number STY130NF20D, offers a 200V drain-source voltage (Vdss) and a continuous drain current of 130A (Tc) at 25°C. This device features a low on-resistance (Rds On) of 12mOhm maximum at 65A and 10V. With a maximum power dissipation of 450W (Tc) and a gate charge (Qg) of 338 nC at 10V, the STY130NF20D is suitable for demanding applications. The component utilizes Metal Oxide technology and is presented in a through-hole MAX247™ package. This power MOSFET is commonly employed in power supply units, motor control, and automotive applications. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 338 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11100 pF @ 25 V |
Request a Quote
Clients Also Buy
STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
STN4NF03L
MOSFET N-CH 30V 6.5A SOT223
STD20NF06LT4
MOSFET N-CH 60V 24A DPAK
