STY100NS20FD
MOSFET N-CH 200V 100A MAX247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STY100NS20FD is an N-Channel Power MOSFET from the MESH OVERLAY™ series. This through-hole device, packaged in a TO-247-3 (MAX247™), features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 100A at 25°C (Tc). With a maximum power dissipation of 450W (Tc) and a low on-resistance (Rds On) of 24mOhm at 50A and 10V, it is engineered for high-efficiency power conversion. Key parameters include a gate charge (Qg) of 360 nC at 10V and input capacitance (Ciss) of 7900 pF at 25V. The MOSFET operates at junction temperatures up to 150°C and supports gate-source voltages (Vgs) up to ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. This component is suitable for applications in industrial power supplies, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MAX247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V |
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