STWA63N65DM2
MOSFET N-CH 650V 60A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STWA63N65DM2 is a 650V N-channel Power MOSFET from the MDmesh™ DM2 series. This device features a continuous drain current of 60A (Tc) at 25°C and a maximum power dissipation of 446W (Tc). The ON-resistance (Rds On) is a maximum of 50mOhm at 30A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 120 nC @ 10V and input capacitance (Ciss) of 5500 pF @ 100V. The STWA63N65DM2 is housed in a TO-247-3 package with long leads, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in applications such as server power supplies, industrial power supplies, and high-voltage converters.
Additional Information
Series: MDmesh™ DM2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 100 V |
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