STWA45N65M5
MOSFET N-CH 650V 35A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STWA45N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series, designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 35 A at 25°C (Tc), with a maximum power dissipation of 210 W (Tc). The ON-resistance (Rds On) is specified at a maximum of 78 mOhm at 17.5 A and 10 V gate drive voltage. Key parameters include a gate charge (Qg) of 82 nC at 10 V and input capacitance (Ciss) of 3470 pF at 100 V. The device operates at junction temperatures up to 150°C and is housed in a TO-247-3 through-hole package, supplied in tubes. This MOSFET is suitable for use in power factor correction, switch-mode power supplies, and industrial applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 100 V |
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