STW9N80K5
MOSFET N-CHANNEL 800V 7A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW9N80K5 is an N-Channel Power MOSFET from the MDmesh™ K5 series, designed for high-voltage applications. This device features an 800V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The STW9N80K5 offers a typical on-resistance (Rds On) of 900mOhm at 3.5A and 10V. Key parameters include a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 340 pF at 100V. It is packaged in a TO-247-3 through-hole configuration, suitable for demanding power conversion circuits. This component finds application in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 100 V |
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