Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STW90NF20

Banner
productimage

STW90NF20

MOSFET N-CH 200V 83A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STW90NF20, is a high-performance component designed for demanding applications. This TO-247-3 packaged device offers a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 83 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 23 mOhm at 45 A and 10 V, and a gate charge (Qg) of 164 nC at 10 V. The input capacitance (Ciss) is specified at a maximum of 5736 pF at 25 V. This through-hole mounted MOSFET operates within a temperature range of -50°C to 150°C (TJ) and is suitable for use in power conversion, industrial automation, and automotive systems.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C83A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 45A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5736 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STD5N20LT4

MOSFET N-CH 200V 5A DPAK

product image
STD30NF06LT4

MOSFET N-CH 60V 35A DPAK

product image
STD140N6F7

MOSFET N-CH 60V 80A DPAK