STW8NB100
MOSFET N-CH 1000V 7.3A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW8NB100 is a PowerMESH™ series N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 7.3 A at 25°C. The device offers a maximum On-Resistance (Rds On) of 1.45 Ohm at 3.6 A and 10 V gate drive. With a maximum power dissipation of 190 W (Tc), it is suitable for demanding power conversion and switching applications. Key parameters include a typical Gate Charge (Qg) of 95 nC at 10 V and Input Capacitance (Ciss) of 2900 pF at 25 V. The STW8NB100 is housed in a TO-247-3 through-hole package, facilitating robust thermal management and assembly processes in industrial and high-power systems.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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