STW80NE06-10
MOSFET N-CH 60V 80A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ STW80NE06-10 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 250W (Tc). The low on-resistance of 10mOhm at 40A and 10V gate drive voltage, coupled with a high gate charge of 189nC at 10V, ensures efficient switching performance. The device utilizes STMicroelectronics' STripFET™ technology and is housed in a TO-247-3 through-hole package, suitable for demanding applications in industrial automation, power supplies, and automotive systems. Operating temperature is rated up to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
