STW75NF30
MOSFET N-CH 300V 60A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STW75NF30, offers a robust solution for high-power applications. This TO-247-3 packaged device features a drain-source breakdown voltage (Vds) of 300V and a continuous drain current (Id) of 60A at 25°C (Tc). With a maximum on-resistance (Rds On) of 45mOhm at 30A and 10V gate-source voltage, it provides efficient power handling with a maximum power dissipation of 320W (Tc). Key parameters include a gate charge (Qg) of 164 nC at 10V and input capacitance (Ciss) of 5930 pF at 25V. The STW75NF30 is suitable for demanding industrial and power conversion applications. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5930 pF @ 25 V |
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