STW75N20
MOSFET N-CH 200V 75A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STW75N20, offers a 200V breakdown voltage and a continuous drain current of 75A at 25°C (Tc). This component features a low on-resistance of 34mOhm maximum at 37A and 10V Vgs, with a typical gate charge (Qg) of 84 nC at 10V. It is housed in a standard TO-247-3 package, suitable for through-hole mounting. The STW75N20 is rated for a maximum power dissipation of 190W (Tc) and operates within an ambient temperature range of -50°C to 150°C. Key applications include power switching circuits and power factor correction in industrial and automotive sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3260 pF @ 25 V |
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