STW62NM60N
MOSFET N-CH 600V 65A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STW62NM60N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 600V drain-source voltage and 65A continuous drain current at 25°C (Tc). This through-hole component features a maximum Rds(on) of 49mOhm at 32.5A and 10V Vgs, with a gate charge (Qg) of 174 nC at 10V. The input capacitance (Ciss) is rated at 5800 pF at 100V. Designed for high power applications, it has a maximum power dissipation of 450W (Tc) and operates at junction temperatures up to 150°C. The STW62NM60N is housed in a TO-247-3 package. This device finds application in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 174 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 100 V |
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