STW60NE10
MOSFET N-CH 100V 60A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STW60NE10, offers a 100V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 180W (Tc). With a low on-resistance of 22 mOhm at 30A and 10V Vgs, it is suitable for high-current applications. Key parameters include a gate charge of 185 nC (max) at 10V and input capacitance of 5300 pF (max) at 25V. The device operates at junction temperatures up to 175°C. This component is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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