STW60N65M5
MOSFET N-CH 650V 46A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW60N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This TO-247-3 packaged device features a continuous drain current of 46A (Tc) and a maximum power dissipation of 255W (Tc). With a low on-resistance of 59mOhm at 23A and 10V Vgs, it is optimized for efficient switching. Key parameters include a gate charge (Qg) of 139 nC at 10V and input capacitance (Ciss) of 6810 pF at 100V. The device operates at junction temperatures up to 150°C. Applications include high-efficiency power supplies, solar inverters, and industrial motor control.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6810 pF @ 100 V |
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