STW57N65M5-4
MOSFET N-CH 650V 42A TO247-4LManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW57N65M5-4 is an N-Channel Power MOSFET from the MDmesh™ V series. This through-hole device features a 650 V breakdown voltage and a continuous drain current of 42 A at 25°C (Tc), with a maximum power dissipation of 250 W (Tc). The drain-to-source on-resistance (Rds On) is specified at a maximum of 63 mOhm at 21 A and 10 V gate-source voltage. Its input capacitance (Ciss) is a maximum of 4200 pF at 100 V, and gate charge (Qg) is 98 nC at 10 V. The MOSFET operates at temperatures up to 150°C (TJ) and is housed in a TO-247-4L package. This component is commonly utilized in high-voltage power conversion applications, including power supplies, solar inverters, and electric vehicle charging systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-4L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 100 V |
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