STW55NM60ND
MOSFET N-CH 600V 51A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW55NM60ND is a 600V N-channel Power MOSFET from the FDmesh™ II series. This through-hole component, housed in a TO-247-3 package, offers a continuous drain current of 51A at 25°C and a maximum power dissipation of 350W at the same temperature. Key electrical characteristics include a drain-source voltage (Vdss) of 600V, and a maximum on-resistance (Rds On) of 60mOhm at 25.5A and 10V gate-source voltage. The device features a gate charge of 190 nC at 10V and input capacitance (Ciss) of 5800 pF at 50V. Operating temperature is rated up to 150°C. This MOSFET is suitable for applications in industrial power supplies, renewable energy systems, and electric vehicle charging.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 50 V |
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