STW55NM60N
MOSFET N-CH 600V 51A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW55NM60N, an N-Channel MDmesh™ II Power MOSFET, features a 600 V breakdown voltage and a continuous drain current of 51 A at 25°C. This device offers a low on-resistance of 60 mOhm maximum at 25.5 A and 10 V gate-source voltage. With a maximum power dissipation of 350 W at 25°C, it is suitable for demanding applications. Key electrical characteristics include a gate charge of 190 nC maximum at 10 V and input capacitance of 5800 pF maximum at 50 V. The STW55NM60N is housed in a TO-247-3 package, designed for through-hole mounting and operation up to 150°C. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 50 V |