STW55NM50N
MOSFET N-CH 500V 54A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW55NM50N is a N-Channel Power MOSFET from the MDmesh™ II series. This component features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 54 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 54 mOhm at 27 A and 10 V, with maximum power dissipation rated at 350 W (Tc). Key parameters include a gate charge (Qg) of 180 nC at 10 V and input capacitance (Ciss) of 5800 pF at 50 V. It is housed in a TO-247-3 package and supports through-hole mounting. Applications for this MOSFET include power supply, industrial, and automotive sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 50 V |
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