STW54NM65ND
MOSFET N-CH 650V 49A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW54NM65ND is a 650V N-Channel Power MOSFET from the FDmesh™ II series. This device features a low Rds(on) of 65mOhm at 24.5A and 10V Vgs, with a continuous drain current rating of 49A at 25°C. The MOSFET offers a maximum power dissipation of 350W at 150°C junction temperature. Key parameters include a gate charge (Qg) of 188 nC at 10V and an input capacitance (Ciss) of 6200 pF at 50V. It is housed in a TO-247-3 package suitable for through-hole mounting. This component is utilized in applications such as renewable energy systems and industrial power supplies.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 24.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 50 V |