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STW54NK30Z

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STW54NK30Z

MOSFET N-CH 300V 54A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STW54NK30Z is a SuperMESH™ N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 54A at 25°C (Tc). The device offers a low on-resistance of 60mOhm maximum at 27A and 10V Vgs. Key parameters include a gate charge (Qg) of 221nC maximum at 10V Vgs and input capacitance (Ciss) of 4960pF maximum at 25V Vds. With a maximum power dissipation of 300W at 25°C (Tc), it is suitable for high-power switching applications. The STW54NK30Z is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in power supplies, motor control, and industrial automation.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 27A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 150µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs221 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4960 pF @ 25 V

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