STW50NB20
MOSFET N-CH 200V 50A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STW50NB20 is a PowerMESH™ series N-Channel MOSFET designed for high-power applications. This device features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 50 A at 25°C (Tc). Its low on-resistance, 55 mOhm maximum at 25 A and 10 V gate drive, minimizes conduction losses. The device exhibits a typical gate charge of 115 nC at 10 V and an input capacitance of 3400 pF at 25 V. With a maximum power dissipation of 280 W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding power conversion and switching circuits in industrial and automotive sectors. The STW50NB20 is housed in a TO-247-3 package for through-hole mounting.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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