STW47NM60ND
MOSFET N-CH 600V 35A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW48NM60ND is an N-channel Power MOSFET from the FDmesh™ II series, designed for high-voltage applications. This through-hole component, housed in a TO-247-3 package, offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 35 A at 25°C (Tc). Featuring a maximum power dissipation of 255 W (Tc) and a low on-resistance (Rds On) of 88 mOhm at 17.5 A and 10 V, it is optimized for efficient switching. The device exhibits a gate charge (Qg) of 120 nC at 10 V and an input capacitance (Ciss) of 4200 pF at 50 V. Qualified to AEC-Q101 and rated for automotive applications, this MOSFET is suitable for demanding power conversion and management systems within the automotive industry.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
| Qualification | AEC-Q101 |
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