STW45NM50FD
MOSFET N-CH 500V 45A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW45NM50FD is an N-Channel Power MOSFET from the FDmesh™ series. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 45A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 100mOhm maximum at 22.5A and 10V (Vgs). With a maximum power dissipation of 417W (Tc), this MOSFET is designed for demanding applications. Key parameters include a gate charge (Qg) of 120 nC maximum at 10V (Vgs) and an input capacitance (Ciss) of 3600 pF maximum at 25V (Vds). The STW45NM50FD is housed in a TO-247-3 through-hole package and operates within a temperature range of -65°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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